Effect of growth temperature on the morphology and crystal structure of InAs/GaAs radial heterostructure nanowires

Low-dimensional semiconductor materials have attracted wide attention and research due to their extraordinary physical properties. In this paper, metal organic chemical vapor deposition (MOCVD) was used to grow InAs/GaAs radial heterostructure nanowires using gold as catalysts. The effects of growth temperatures of InAs radial heterostructure on the morphology and crystal structure of the nanowires were discussed. Increasing the growth temperature of InAs material can effectively inhibit the axial growth of nanowires and achieve the growth of radial heterostructures. The lateral crystal surface rotation occurs when the heterostructure nanowires grow laterally, which is the result of the lower side of the nanowires. The research work in this paper provides a theoretical basis and scientific basis for the development of micro-nano technology.